| 摘要 |
PROBLEM TO BE SOLVED: To give favorable electrical characteristics to a semiconductor device, and also to provide a semiconductor device having high reliability.SOLUTION: There is provided an oxide semiconductor film. When a plurality of electron diffraction patterns are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while the position of the oxide semiconductor film and the position of the electron beam are relatively moved, the plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points indicating that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed, and the second electron diffraction pattern includes observed points not having symmetry or an observed region disposed in a circular shape.SELECTED DRAWING: None |
