FABRICATION METHOD OF HIGH DIELECTRIC CAPACITOR,申请号KR19960055863-传众专利搜索

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发明名称	FABRICATION METHOD OF HIGH DIELECTRIC CAPACITOR
摘要
申请公布号	KR100213263(B1)	申请公布日期	1999.08.02
申请号	KR19960055863	申请日期	1996.11.20
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	PARK, SOON-OH
分类号	H01L27/105;(IPC1-7):H01L27/105	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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