发明名称 |
Nonvolatile devices with P-channel EEPROM devices as injector |
摘要 |
An FET semiconductor device includes an N-region and a P-region formed in the substrate with the N-region juxtaposed with the P-region with an interface between the N-region and the P-region and with a first channel in the N-region and a second channel in the P-region. An N+ drain region is near the interface on one side of the first channel in the P-region. A P+ drain region is near the interface on one side of the second channel in the N-region. An N+ source region is on the opposite side of the first channel from the interface in the P-region. A P+ source region is on the opposite side of the first channel from the interface in the N-region. A wide gate electrode EEPROM stack bridges the channels in the N-region and the P-region. The stack includes a tunnel oxide layer, a floating gate electrode layer, an interelectrode dielectric layer, and a control gate electrode. An N+ drain region is formed in the surface of the P-region self-aligned with the gate electrode stack. A P+ drain region is formed in the surface of the N-region self-aligned with the gate electrode stack.
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申请公布号 |
US5933732(A) |
申请公布日期 |
1999.08.03 |
申请号 |
US19970851563 |
申请日期 |
1997.05.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN, YAI-FEN;LIAW, SHIOU-HANN;KUO, DI-SON;LEE, JIAN-HSING |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/788;(IPC1-7):H01L21/824 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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