ELASTIC WAVE DEVICE

摘要

An elastic wave device includes an IDT electrode provided on a main surface of a LiTaO3 substrate, and uses plate waves in an SH0 mode, which is a basic mode of SH waves. A wavelength-normalized thickness of the LiTaO3 substrate normalized by a wavelength determined by a pitch of electrode fingers of the IDT electrode, and an Al equivalent wavelength-normalized thickness of the IDT electrode satisfy any one of combinations listed in the following table:;(a)The wavelength-normalized thickness is about 0.01 ormore and about 0.30 or less, and the wavelength-normalized thickness of Al is about 0.04 or more andabout 0.1 or less.(b)The wavelength-normalized thickness is about 0.01 ormore and about 0.70 or less, and the wavelength-normalized thickness of Al is about 0.04 or more andabout 0.08 or less.

主权项

1. An elastic wave device comprising:
a LiTaO3 substrate; and an IDT electrode provided on a main surface of the LiTaO3 substrate and made of Al or predominantly made of Al; wherein the elastic wave device uses a plate wave in an SH0 mode that is a basic mode of SH waves; and a wavelength-normalized thickness of the LiTaO3 substrate that is a thickness of the LiTaO3 substrate normalized by a wavelength determined by a pitch of electrode fingers of the IDT electrode and an Al equivalent wavelength-normalized thickness of the IDT electrode satisfy any one of combinations listed in Table 1:TABLE 1(a)The wavelength-normalized thickness is about 0.01 ormore and about 0.30 or less, and the wavelength-normalized thickness of Al is about 0.04 or more andabout 0.1 or less.(b)The wavelength-normalized thickness is about 0.01 ormore and about 0.70 or less, and the wavelength-normalized thickness of Al is about 0.04 or more andabout 0.08 or less.