| 发明名称 |
SEMICONDUCTOR LASER DEVICE |
| 摘要 |
A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al. |
| 申请公布号 |
US2016352075(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615235685 |
申请日期 |
2016.08.12 |
| 申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
IWAMI Masayuki;ISHII Hirotatsu;IWAI Norihiro;MATSUDA Takeyoshi;KASUKAWA Akihiko;ISHIKAWA Takuya;KAWAKITA Yasumasa;KAJI Eisaku |
| 分类号 |
H01S5/343;H01S5/227;H01S5/30 |
主分类号 |
H01S5/343 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor laser device comprising an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group, wherein
a V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al. |
| 地址 |
Tokyo JP |
