| 摘要 |
A process for treating a semiconductor substrate, comprising a prior surface-treatment step using a plasma at medium or low pressure, preferably having an electron concentration Ne>/=1011 cm-3 and preferably producing a small potential difference Vp-Vf<20 V, wherein the surface energy of the treated surface is determined so as optionally to have fast feedback on the control of the process in order to optimize the plasma treatment, and the prior surface treatment step may be followed by a deposition step with a view to filling or planarizing the treated surface or to improving morphological, physical, or electrical characteristics of materials deposited on the treated surface.
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