Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device includes the steps of: forming a laminated film by forming an aluminum film and a titanium film in this order on P-type and N-type electrically conductive regions of a silicon substrate and forming a silicide layer containing a titanium silicide as a major component on the electrically conductive region by allowing the laminated film to react with silicon constituting the silicon substrate by a first heat treatment.