发明名称 LIGHT EMITTING DEVICE
摘要 Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.
申请公布号 US2016351769(A1) 申请公布日期 2016.12.01
申请号 US201615232263 申请日期 2016.08.09
申请人 LG INNOTEK CO., LTD. 发明人 JUNG Se Yeon;LEE Yong Gyeong
分类号 H01L33/62;H01L33/46;H01L33/42 主分类号 H01L33/62
代理机构 代理人
主权项 1. A light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first current blocking layer disposed on the light emitting structure; a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer; a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer and the light emitting structure; a first electrode electrically connected to the first conductive semiconductor layer and overlapped with the first current blocking layer in the vertical direction; a second electrode electrically connected to the second conductive semiconductor layer and overlapped with the second current blocking layer in the vertical direction; a through electrode disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer; and an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer, wherein the through electrode is electrically connected to the first electrode and electrically separated from the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer by the insulation layer.
地址 Seoul KR