| 发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively. |
| 申请公布号 |
US2016351725(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615098385 |
申请日期 |
2016.04.14 |
| 申请人 |
BOE Technology Group Co., Ltd. ;Hefei Xinsheng Optolectronics Technology Co., Ltd. |
发明人 |
Song Botao;Jiang Tao;Han Junhao;Han Ling;Cao Binbin;Yang Chengshao |
| 分类号 |
H01L29/786;H01L27/12 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor, comprising: an active layer, a source and a drain, wherein
the active layer of the thin film transistor is provided with a first groove and a second groove which neither pass through the active layer, the source and the drain of the thin film transistor are formed at least partially in the first groove and the second groove, respectively, and the source and the drain are in contact with the active layer through the first groove and the second groove, respectively. |
| 地址 |
Beijing CN |
