发明名称 Device, system and method for providing MEMS structures of a semiconductor package
摘要 Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.
申请公布号 US9505610(B2) 申请公布日期 2016.11.29
申请号 US201314129541 申请日期 2013.09.25
申请人 Intel Corporation 发明人 Teh Weng Hong;Ibrahim Tarek A;Haney Sarah K;Sobieski Daniel N;Zantye Parshuram B;Mair Chad E;Kamgaing Telesphor
分类号 H01L21/00;B81C1/00 主分类号 H01L21/00
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A semiconductor package comprising: a die; a build-up carrier coupled to the die, the build-up carrier comprising a plurality of build-up layers including a first layer of porous dielectric material; and a MEMS device having a suspended copper portion anchored by the plurality of build-up layers, wherein a gap separates the suspended copper portion from an exposed surface of the first layer of porous dielectric material, wherein the layer of porous dielectric material has tunnels formed therein, wherein residual copper is disposed within the tunnels.
地址 Santa Clara CA US