| 摘要 |
PROBLEM TO BE SOLVED: To provide methods of selectively etching cobalt on substrates.SOLUTION: A method involves exposing a substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. The additives include H, CH, CF, NFand Cl. The boron-containing halide gases include BCl, BBr, BF, and BI. Exposures of them may be performed in two or more cycles, with variations in duration and/or bias power for each exposure in the two or more cycles.SELECTED DRAWING: Figure 1 |
