METHOD FOR FORMING TRENCH OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A trench forming method is provided to improve a reliability of an isolation region by forming the trench after particles existed on a semiconductor substrate are removed. CONSTITUTION: The method comprises the steps of: sequentially depositing an oxide layer(12) and a nitride layer(13) on a semiconductor substrate(11); etching the portion of the nitride layer(13) and the oxide layer(12) to expose the semiconductor substrate(11); performing a chemical treatment the exposed semiconductor substrate using HF chemical solution to remove particles(14,15) on the exposed semiconductor substrate; and forming a trench by etching the exposed semiconductor substrate.