INNER VOLTAGE BOOST CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS

摘要

PURPOSE: An inner voltage boost circuit for a semiconductor memory apparatus is provided to prevent a voltage from falling even in a short active cycle of the external controlling signal inputted from outside. CONSTITUTION: An inner voltage raising circuit for a semiconductor memory apparatus comprises: a first raised voltage generating unit(111) inputting an external controlling signal from external and generating a raised voltage higher than a source voltage; a raised voltage detecting unit(121) detecting a level of the raised voltage; a controlling unit(131) generating a controlling signal in response to the output signal from the raised voltage detecting unit; and a second raised voltage generating unit(141) generating another raised voltage higher than an external voltage in response to the output from the controlling unit.