GATE INSULATION FILM FOR THIN FILM TRANSISTOR AND ITS FABRICATING METHOD, THIN FILM TRANSISTOR USING THEREOF AND ITS FABRICATING METHOD

摘要

PURPOSE: A method is to increase the deposition speed and to suppress the particle formation generated in the gate insulation film deposition process of a thin film transistor liquid crystal display device. CONSTITUTION: A method comprises the steps of: forming a gate electrode(20) in a substrate(10) and forming a gate insulation film(30) comprised of dual films on the gate electrode; the bottom layer(31) of dual films is formed with a silicon nitride film including halogen below 10 percents by PECVD in the 150 - 400°C and in the 0.1 - 1.0 torr by mixing halogen compound gas below 20 vol percents with a reaction gas; completing the gate insulation film by depositing a silicon nitride film not including halogen in the thickness of 5 - 50 percent of the total thickness of the gate insulation film; forming a channel layer of a thin film transistor by depositing and patterning an amorphous silicon and a doped amorphous silicon; forming a source electrode(61) and a drain electrode(62) by depositing and patterning a metal; and revealing the undoped amorphous silicon layer by etching the doped amorphous silicon layer using the source and drain electrode as a mask.