| 摘要 |
PROBLEM TO BE SOLVED: To enable a plasma treating device which treats a substrate by placing the substrate on a tray which is, in turn, placed on an electrode, to improve the yield of the substrate in the peripheral edge section of the substrate and, at the same time, to increase the reaction rate by increasing the substrate cooling performance of the device and throwing in high power. SOLUTION: A plasma treating device is constituted to treat a substrate 1 while the substrate 1 is magnetically attracted to a tray 3 by polarizing an insulating film 2 by providing a thin insulating film 2 on the surface of a tray 3 which comes into contact with the substrate 1 and a means (a corrosion- resistant coating film 16 formed on the surface of an electrode 10 which comes into contact with the tray 3 and composed of gold, etc., which can be conducted easily and hardly corrodes) which brings an electrode 10 and the tray 3 in electrical continuity. Consequently, the yield of the substrate 1 in the peripheral edge section of the substrate 1 can be improved by preventing the deterioration in the reaction rate and the orbit bending due to an obstacle, such as a clamp ring, etc., in the peripheral edge section of the substrate 1 and the reaction rate is increased by throwing in high power while the change in properties of a resist is prevented by more evenly cooling the substrate 1.
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