| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern whose cross section form is uniform by selectively growing epitaxial crystal in two line forms whose cross section forms are substantially equal in two equivalent axial directions which are mutually orthogonal. SOLUTION: Since a Y-direction where a vertical semiconductor layer 1a extends, namely, a direction rotated counter clockwise from the direction of <1-100> by 15 degrees and a direction where a lateral semiconductor layer 1b extends, namely an X-direction are crystallographically equivalent growth rate in the X-direction of a GaN epitaxial layer 3 and growth rate in the Y- direction are equal. Thus, the vertical semiconductor layer 1a and the lateral semiconductor layer 1b form a cross-type test pattern whose cross section form is uniform by selectively growing a face equivalent to the face (0001) of a high resistance epitaxial layer stacked on a sapphire substrate. Thus, the epitaxial crystal layer can precisely and electrically be measured by using the test pattern.
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