| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer for semiconductor device which prevents the leakage of a current at the pinch-off operation of a field-effect transistor and is superior in rectification characteristics, and a method of manufacturing the wafer. SOLUTION: A wafer for semiconductor device is formed using a compound semiconductor substrate 1, having the surface crystal orientation face (111), the face equivalent to the face (111) or the face of the lowest density of a dangling bond, whereby interfacial carriers between the substrate and a semiconductor layer on the substrate are remarkedly decreased. When this phenomenon is applied to a field-effect transistor, the generation of a leakage current due to the interfacial carriers is inhibited, the rectification characteristics of the transistor using a compound semiconductor layer, where a lattice mismatching exists, can be remarkedly raised, a leakage of a current at the pinch-off operation of the transistor is prevented from being generated and the provision of the wafer having superior rectification characteristics and a method of manufacturing the wafer can be realized.
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