发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To shorten the rinsing time and also to reduce the amount of rinsing by quickly substituting a chemical solution deposited on a wafer without causing deposition of particles. SOLUTION: A reference numeral 1 is a rinse liquid supply part 2, a rinse bath 3, a silicon wafer, 4 a wafer-holding guide, 5 a punched hole, 6 a drain liquid drain part, 7 an exhaust liquid valve respectively. A supply rate of the rinse liquid from a top of the bath is set nearly equal to the liquid exhausting rate from a bottom of the bath, so that the wafer in the rinse liquid will not expose above a liquid surface. Then the rinse liquid is also made to flow in the bath without causing stay or convection of the liquid, whereby a chemical liquid deposited on the wafer can be quickly substituted and the wafer can be rinsed without newly causing deposition of particles.
申请公布号 JP2000100761(A) 申请公布日期 2000.04.07
申请号 JP19980272107 申请日期 1998.09.25
申请人 SEIKO EPSON CORP 发明人 NISHIJIMA TATSUMI
分类号 B08B3/08;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B3/08
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