| 摘要 |
<p>A bipolar transistor and a field-effect transistor having an electron quantum-wave interference layer with plural periods of a pair of a well layer W and a barrier layer B in a p-layer. The well and barrier thicknesses are an odd multiple of a quarter quantum-wave wavelength of carriers in each of the well layer W and the barrier layer B, preferably around the lowest energy level of the barrier layer B. The quantum-wave interference layer functions as an electron reflecting layer, and enables to improve the amplification factor of an npn bipolar transistor having such a quantum-wave interference layer formed in its bax region. Similarly, a bipolar transistor having a hole reflecting layer, which has a larger amplification factor, can be obtained. A hole reflecting layer can moreover be formed in the channel region of a field-effect transistor such as a MESFET.</p> |
