| 发明名称 | Semiconductor structure with lamella defined by singulation trench | ||
| 摘要 | A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench. | ||
| 申请公布号 | US9527725(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201414254388 | 申请日期 | 2014.04.16 |
| 申请人 | Infineon Technologies AG | 发明人 | Binder Boris;Foeste Bernd;Kautzsch Thoralf;Kolb Stefan;Mueller Marco |
| 分类号 | H01L29/84;B81C1/00;G01L9/00;G01L13/02;G01L15/00 | 主分类号 | H01L29/84 |
| 代理机构 | Eschweiler & Associates, LLC | 代理人 | Eschweiler & Associates, LLC |
| 主权项 | 1. A method for fabricating a semiconductor structure, the method comprising: etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench. | ||
| 地址 | Neubiberg DE | ||