发明名称 |
METHOD OF ELIMINATING PHOTORESIST LAYER IN MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method of eliminating a photoresist layer in manufacturing a semiconductor device is provided to improve an eliminating rate of a photoresist layer by changing the order of asking and stripping processes in eliminating the photoresist layer. CONSTITUTION: In a method of eliminating a photoresist layer by continuously dry-etching and wet-etching after a photo lithography, and sequentially using asking and stripping processes, the stripping process is performed prior to the asking process. Also, the asking process can be omitted in eliminating the photoresist layer.
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申请公布号 |
KR20000028029(A) |
申请公布日期 |
2000.05.15 |
申请号 |
KR19980046144 |
申请日期 |
1998.10.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JONG SIK |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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