| 摘要 |
<p>PURPOSE: A polycrystalline silicon thin film forming method and thin film forming apparatus are provided, which can form that thin film comparatively at low costs and good productivity under the low temperature. In addition to this, it provides a thin film formation equipment used for the formation of the thin film. CONSTITUTION: A plasma is formed from the mixed gases of material gas having a silicon-atom and hydrogen gas, or a silane system reactive gas. It controls the plasma state to be over 1 in a luminous strength ratio of hydrogen radical (Hβ) to SiH radical among the plasma, or the plasma potential to be under 60V, and forms the polycrystalline silicone thin film based on the plasma. In that formation equipment by the plasma CVD having a plasma generation chamber (1), a discharge electrode (3) connected to a discharge power (4), gas supply equipment (5), and an exhaust equipment (6), the thin film formation equipment has the control part to control at least one of these: power supply from the discharge power (4) to keep the fixed state of the plasma based upon the detection information by an emission spectrometric measurement system (7) and/or probe measurement system (8) to measure the plasma state; gas supply from the gas supply equipment; and exhaust from the exhaust equipment.</p> |
