| 发明名称 |
Improved field-effect transistor and corresponding manufacturing method |
| 摘要 |
<p>Field effect transistor (1) integrated on a semiconductor substrate (4) with a respective active area (8) comprising: a region of source (2) and a region of drain (3) formed in the semiconductor substrate (4), a channel region (5) interposed between said regions of source (2) and of drain (3) having a predefined nominal width (WN), wherein said channel region (5) has an effective width (Weff) defined by a variable profile of doping. <IMAGE></p> |
| 申请公布号 |
EP1003222(A1) |
申请公布日期 |
2000.05.24 |
| 申请号 |
EP19980830694 |
申请日期 |
1998.11.19 |
| 申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PIO, FEDERICO;ZULIANI, PAOLA |
| 分类号 |
H01L21/762;H01L29/10;(IPC1-7):H01L29/10;H01L21/266;H01L21/336 |
主分类号 |
H01L21/762 |
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