| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD reactive device, together with its method, for reducing the processes for manufacturing an epitaxial-grown semiconductor wafer or simplifying a manufacturing method. SOLUTION: The CVD reactive device comprises an upper reactive chamber 2, a lower reactive chamber 3, and a diaphragm 4. The diaphragm comprises a circular through opening 5, with a reception ring 6 for a wafer provided in the through opening 5. A method for manufacturing a semiconductor wafer comprises a process (a) where a semiconductor wafer is attached to the CVD reactive vessel, a process (b) where the semiconductor wafer is heated using a heater source, a process (c) where a protective layer is deposited on the rear surface of the semiconductor substrate wafer, a process (d) where an epitaxial layer is deposited on the front surface of the semiconductor wafer, and a process (e) were an epitaxial-grown semiconductor wafer is taken out of the CVD reactive device. Thus, the number of processes for manufacturing a semiconductor wafer is decreased.
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