| 摘要 |
PROBLEM TO BE SOLVED: To minimize the existence of a protective film and improve the yield with the cleavage, assembling, etc., by forming a semiconductor layer to be a current block layer outside the protective film at the outsides of ridges. SOLUTION: On a substrate 21 a first conductivity-type clad layer 11 and an active layer 12 are laminated, a protective film 31 which is an insulation layer is deposited thereon, the protective film 31 on a ridge dummy region at an outer part of the protective film 31 is removed through photolithography, a semiconductor layer to be a current block layer 16 is formed on the ridge dummy region, a ridge-forming opening is bored in a central part of the protective film by the photolithography, a second conductive clad layer 13a and a contact layer 14a are deposited on the ridge part and layers 13b, 14b corresponding to them are deposited on the ridge dummy region. Thus the yield with the cleavage and assembling can be improved.
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