| 摘要 |
PURPOSE: A magnetic memory device is provided to process data regardless of a variation of an absolute impedance of a memory cell owing to a process of the absolute impedance. CONSTITUTION: A magnetic memory device comprises a memory cell field(11) which consists of a plurality of memory cells(1). An addressing circuit is allotted to word lines(3), and an estimation circuit is allotted to sense amplifiers(4). The memory cells(1) are arranged in a matrix form at intersections of the word lines(3) and the sense amplifiers(4), and a logic data content of each cell(1) is defined by a magnetic state. A word line(4) connected to a selected one of the memory cells(1) is supplied with a read voltage(V) by the addressing circuit. A comparison circuit(16) compares a sense signal(Vs) of the selected memory cell with a reference signal(Vr). |
