发明名称 SEMICONDUCTOR MEMORY DEVICE USING COMMON ADDRESS BUS LINE BETWEEN PLURAL ADDRESS BUFFERS AND COLUMN PRE- DECODER
摘要 PROBLEM TO BE SOLVED: To reduce the number of address bus lines and to enhance degree of integration by buffering a first address signal, delaying the buffered address signal for a prescribed time, buffering the buffered address signal and the delayed address signal and generating a second address signal. SOLUTION: When a read-out command is outputted, and an external address buffer 41 receives the address signal, a read-out control signal CASATV6-RD becomes high, and an NMOS transistor G18 is turned on. A write-in control signal CASATV6-WT and a burst control signal ICASATV6 become low, and the NMOS transistors G50, G19 are turned off. When a delay element 43 causes the buffered address signal to delay by two clocks by through a write-in command, the write-in control signal CASATV6-WT becomes high, and the NMOS transistor G50 is turned on.
申请公布号 JP2000195266(A) 申请公布日期 2000.07.14
申请号 JP19990368410 申请日期 1999.12.24
申请人 HYUNDAI ELECTRONICS IND CO LTD 发明人 RYU SEIKUN;KAN SHOKI
分类号 G11C11/408;G11C8/06;G11C11/407;(IPC1-7):G11C11/408 主分类号 G11C11/408
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