METHOD FOR FORMING INSULATION FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an insulation film of a semiconductor device is provided which can suppress the generation of void by increasing the flowage of a BPSG film and can prevent the short of a metal layer by using a lightly doped BPSG film as a contact part with a wire. CONSTITUTION: A method suppresses the generation of void by increasing the flowage of a BPSG film and prevents the short of a metal layer by using a lightly doped BPSG film as a contact part with a wire. The method includes the steps of: forming a spacer film on top of the whole structure after forming a gate polysilicon transistor on top of a substrate(201) where a cell region and a peripheral region are separated; performing a RTP(Rapid Thermal Processing) process and a reflow process after forming a heavily doped BPSG film on top of the whole structure; removing the heavily doped BPSG film formed on the peripheral region after etching the heavily doped BPSG film partially; forming a lightly doped BPSG film(209) having a lower B density than the heavily doped BPSG film on top of the whole structure; and planarizing the surface of the lightly doped BPSG film.