| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to form a contact hole in plural layer-insulating layers with an organic spin-on-glass layer. CONSTITUTION: A method for forming a contact hole of a semiconductor device comprises forming wiring(13) on a substrate(11), forming a first layer-insulating layer(15) of organic insulating material with low dielectric constant and a second layer-insulating layer(17) of inorganic material, coating photoresist on the second layer-insulating layer(17), pattering the photoresist to expose a portion corresponding to the wiring(13), etching the first and the second layer-insulating layer(15, 17) to form a contact hole(21), and removing the photoresist.
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