| 摘要 |
PROBLEM TO BE SOLVED: To adjust an on-voltage of a diode to a desired value by manufacturing a diode comprising two or more kinds of different on-voltages using a selection re-growth process. SOLUTION: A collector contact layer 2 and collector layer 3 are sequentially formed on a semiconductor substrate 1, an insulating film 9 is formed on the collector layer 3 before providing an insulating film opening in a re-growth region at a diode element part in a photo-resist process, and a P-type semiconductor layer 11 is selectively re-grown at the insulating film opening part, forming PN junction with the collector layer 3. An electrode metal 132 is vapor- deposited on the semiconductor layer 11 while, related to a diode part, an N+ type subcollector layer 2 is exposed to form an electrode metal 131 providing an ohmic contact to the collector electrode 6 and N+ type semiconductor, forming a PN junction diode which decides an on-voltage.
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