| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which less effects due to dimensional variation of a process is given and in which a highly accurate resistance element is formed. SOLUTION: This semiconductor device is provided with a first wiring layer 7 which is formed with an interlayer insulation film 11 inbetween, on an almost rectangular resistance layer 1 comprising a resistance element formed on a substrate, and a second wiring layer 5 which is formed on the first wiring layer 7 with a second interlayer insulation film 10 inbetween. The first wiring layer 7 is formed covering a resistance layer 1, in a state where a part corresponding to the central part of the resistance layer 1 is drilled out, and the second wiring layer 5 is connected to the central part of the resistance layer 1 via a hole part drilled out in the first wiring layer 7. Furthermore, the first wiring layer 7 is connected with the resistance layer 1 by means of a first contact group 6 arranged around a circumference where a connecting part between the second wiring layer 5 and a resistance layer 1 is centered, and the first wiring layer 7 constitutes a first terminal and the second wiring layer 5 constitutes a second terminal respectively.
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