| 发明名称 |
Method for fabricating semiconductor device with fin-shaped structure |
| 摘要 |
A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer. |
| 申请公布号 |
US9461150(B2) |
申请公布日期 |
2016.10.04 |
| 申请号 |
US201514979594 |
申请日期 |
2015.12.28 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chien Chin-Cheng;Hsu Hsin-Kuo;Liu Chih-Chien;Lin Chin-Fu;Wu Chun-Yuan |
| 分类号 |
H01L29/66;H01L21/02;H01L29/10;H01L29/78;H01L29/06;H01L21/311;H01L29/36 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device with fin-shaped structure, comprising:
forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; planarizing the epitaxial layer before removing a portion of the second dielectric layer; and removing a portion of the second dielectric layer. |
| 地址 |
Hsin-Chu TW |
