| 发明名称 | High voltage semiconductor device and method of manufacturing the same | ||
| 摘要 | A high voltage semiconductor device includes a well region of a first conductive type formed at a surface portion of a substrate, a gate electrode disposed on the well region, a source region formed at a surface portion of the well region adjacent to the gate electrode, a drain region formed at a surface portion of the well region adjacent to the gate electrode, and a drift region of a second conductive type disposed under the drain region. | ||
| 申请公布号 | US9461117(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514696794 | 申请日期 | 2015.04.27 |
| 申请人 | DONGBU HITEK CO., LTD. | 发明人 | Ko Choul Joo |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L21/336;H01L29/08;H01L29/78;H01L29/10;H01L29/66;H01L29/06;H01L29/423 | 主分类号 | H01L29/76 |
| 代理机构 | Patterson Thuente Pedersen, P.A. | 代理人 | Patterson Thuente Pedersen, P.A. |
| 主权项 | 1. A high voltage semiconductor device comprising: a well region of a first conductive type formed at a surface portion of a substrate; a gate electrode disposed on the well region; a source region formed at a first surface portion of the well region adjacent to the gate electrode; a drain region formed at a second surface portion of the well region adjacent to the gate electrode; and a drift region of a second conductive type disposed in the well region, the drain region is disposed vertically above the drift region. | ||
| 地址 | Gangnam-Gu, Seoul KR | ||