Non-volatile memory and semiconductor device

摘要

There is provided a non-volatile memory including: plural zener zap devices, each including a cathode region and an anode region formed in a well; and a metal wiring line that is formed above the plural zener zap devices, that is commonly connected to each of the cathode regions, and that supplies a write voltage to each of the zener zap devices.

主权项

1. A non-volatile memory comprising:
a plurality of zener zap devices, each of the zener zap devices including a cathode region on each side of an anode region and a dual-presence region in which both a cathode region and an anode region are present between each cathode region and the respective side of the anode region, wherein the plurality of zener zap devices are arranged in a linear direction such that a zener zap device of the plurality of zener zap devices shares two cathode regions with adjacent zener zap devices of the plurality of zener zap devices; and a metal wiring line overlapping each dual-presence region of the plurality of zener zap devices, commonly connected to each of the cathode regions.