发明名称 |
Semiconductor device |
摘要 |
A semiconductor device which uses a fin-type semiconductor layer to form a bipolar transistor. The substrate of the device is a semiconductor substrate. A collector is a first-conductivity type impurity region which is formed in the semiconductor substrate. A base is a second-conductivity type impurity region which is formed in the surface layer of the collector. A first semiconductor layer is a fin-type semiconductor layer which lies over the base. An emitter is formed in the first semiconductor layer and its bottom is coupled to the base. A first contact is coupled to the collector, a second contact is coupled to the base, and a third contact is coupled to the emitter. |
申请公布号 |
US9461036(B2) |
申请公布日期 |
2016.10.04 |
申请号 |
US201514679051 |
申请日期 |
2015.04.06 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
Suzuki Hisamitsu |
分类号 |
H01L29/66;H01L27/06;H01L29/78;H01L29/732;H01L29/08;H01L29/06;H01L21/8249 |
主分类号 |
H01L29/66 |
代理机构 |
Mattingly & Malur, PC |
代理人 |
Mattingly & Malur, PC |
主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a first first-conductivity type region formed in the semiconductor substrate; a second-conductivity type region formed in a surface layer of the first first-conductivity type region; a first semiconductor layer located over the second-conductivity type region; a second first-conductivity type region formed in the first semiconductor layer with a bottom thereof coupled to the second-conductivity type region; a first contact coupled to the first first-conductivity type region; a second contact coupled to the second-conductivity type region; a third contact coupled to the second first-conductivity type region, and a second-conductivity type separation region formed in the semiconductor substrate, surrounding side and bottom faces of the first first-conductivity type region, wherein the semiconductor substrate is of the first-conductivity type. |
地址 |
Tokyo JP |