| 发明名称 | Semiconductor substrate, eletronic device and method for manufacturing the same | ||
| 摘要 | A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a ring shape and includes nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles. | ||
| 申请公布号 | US9460965(B2) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514826603 | 申请日期 | 2015.08.14 |
| 申请人 | NAPRA CO., LTD. | 发明人 | Sekine Shigenobu;Sekine Yurina |
| 分类号 | H01L23/48;H01L21/768;H01L23/498;H01L21/02;H01L21/28 | 主分类号 | H01L23/48 |
| 代理机构 | Westerman, Hattori, Daniels & Adrian, LLP | 代理人 | Westerman, Hattori, Daniels & Adrian, LLP |
| 主权项 | 1. A semiconductor substrate comprising a vertical conductor and an insulating layer, the vertical conductor including a metal/alloy component of a nanocomposite crystal structure and being filled in a vertical hole formed in the semiconductor substrate along its thickness direction, the insulating layer being formed around the vertical conductor in a ring shape and including nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles. | ||
| 地址 | Tokyo JP | ||