Plasma processing method and plasma processing apparatus

摘要

A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.

主权项

1. A plasma processing method for performing a plasma process on a target substrate having an insulating film and a mask film of a titanium-containing material in a plasma processing space, the plasma processing method comprising:
a first process of supplying a first fluorine-containing gas into the plasma processing space and etching the insulating film, with plasma of the first fluorine-containing gas and with the mask film of the titanium-containing material as a mask, so that a carbon-containing material generated from the insulating film and a titanium-containing material generated from the mask film are deposited on a member in the plasma processing space; a second process of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, the carbon-containing material to expose the titanium-containing material deposited on the member; and a third process of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the exposed titanium-containing material deposited on the member, after the second process.