HIGH POWER SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

摘要

PURPOSE: A high power semiconductor laser chip and a manufacturing method thereof are provided to improve the characteristics and reliability of the chip by solving the problem caused by the exposed higher clad layer. CONSTITUTION: In the high power semiconductor laser chip, a first conductive-type semiconductor substrate(10) has a groove at the center. The groove includes a slope side having the first orientation and a flat bottom having the second orientation. The upper part of the first semiconductor substrate(10) also has the second orientation. A first conductive-type buffer layer(12) is formed on the upper part of the semiconductor substrate(10), on the bottom at the center and on each slope side. A current limiting layer(13) having a high band-gap energy is formed on each slope side of the center groove. A first conductive-type lower clad layer(14) is formed on the flat bottom of the buffer layer(12) and on the bottom of the center groove. An active layer(16) is formed on the current limiting layer(13) and on the lower clad layer(14) along the curve. A second conductive-type upper clad layer(18) is formed on the active layer(16). A second conductive-type current passing layer(19) is formed on the slope of the center V groove of the upper clad layer(18). A first conductive-type current-blocking layer(20) is formed on the flat upper part of the upper clad layer(18). A second conductive-type easy current-passage layer(22) is formed on the current-blocking layer(20). A second conductive-type cap layer(24) is formed on the second conductive easy current-passge layer(22).