| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystal semiconductor film of high-quality polysilicon, etc., by improving mobility of electrons and holes. SOLUTION: A process where a semiconductor film 2 is formed on a substrate 1 by a catalyst CVD(chemical vapor development) method, and a process where the semiconductor film 2 is laser-annealed to provide a polycrystal semiconductor film 3, are provided. Here, the semiconductor 2 may be silicon, while the silicon may contain germanium.
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