发明名称 |
Improved top layer imaging lithography for semiconductor processing |
摘要 |
<p>Etching a surface (12) comprises: (a) providing an under layer (14) on a substrate with a top layer (16) on it; (b) patterning the top layer to expose parts of the under layer; (c) forming a siliceous layer (22) on the exposed parts; (d) removing the top layer to expose the under layer in parts other than the parts having the siliceous layer on them; and (e) etching the under layer in parts other than the parts having the siliceous layer on them.</p> |
申请公布号 |
EP1047118(A2) |
申请公布日期 |
2000.10.25 |
申请号 |
EP20000106894 |
申请日期 |
2000.03.31 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
BUTT, SHAHID;SCHROEDER, UWE PAUL |
分类号 |
H01L21/302;H01L21/027;H01L21/3065;H01L21/311;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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