发明名称 Improved top layer imaging lithography for semiconductor processing
摘要 <p>Etching a surface (12) comprises: (a) providing an under layer (14) on a substrate with a top layer (16) on it; (b) patterning the top layer to expose parts of the under layer; (c) forming a siliceous layer (22) on the exposed parts; (d) removing the top layer to expose the under layer in parts other than the parts having the siliceous layer on them; and (e) etching the under layer in parts other than the parts having the siliceous layer on them.</p>
申请公布号 EP1047118(A2) 申请公布日期 2000.10.25
申请号 EP20000106894 申请日期 2000.03.31
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 BUTT, SHAHID;SCHROEDER, UWE PAUL
分类号 H01L21/302;H01L21/027;H01L21/3065;H01L21/311;(IPC1-7):H01L21/027 主分类号 H01L21/302
代理机构 代理人
主权项
地址