发明名称 ION IMPLANTER
摘要 PROBLEM TO BE SOLVED: To provide an ion implanter capable of stably performing ion implantation by restraining ion source material gas from being solidified and deposited in an electric insulating exhaust pipe installed astride between an airtight box to be applied with high voltage and a grounded shield cabinet. SOLUTION: An ion implanter A is provided with an ion source 11 and an exhaust device 2 for exhausting gas from the ion source. An electric insulating exhaust pipe 27 extending astride from an airtight box 4 of a shield cabinet 5 and for exhausting gas to the outside of the shield cabinet 5 is connected to the exhaust device 2, and the exhaust device 2 is provided with a filtration filter 23 in the front stage position from the insulating exhaust pipe 27.
申请公布号 JP2000306542(A) 申请公布日期 2000.11.02
申请号 JP19990117054 申请日期 1999.04.23
申请人 NISSIN ELECTRIC CO LTD 发明人 SAITO YOSHINORI
分类号 H01J37/18;C23C14/48;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J37/18
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