Verfahren zur vertikalen Integration von elektrischen Bauelementen mittels Rückseitenkontakt

摘要

The invention relates to a method for joining two semiconductor components, which comprises the following steps: preparation of first component structures in a first main surface of a first semiconductor substrate (1) and provision of same with first contact zones; creation of via holes (14) filled with an electrically conductive material in the first semiconductor substrate, which holes are electrically insulated in relation to said first semiconductor substrate (1), extend as far as the second main surface of the first semiconductor substrate and via an electrically conductive joining material (16) on the first main surface of the first semiconductor substrate are connected in an electrically conductive manner to the first contact zones; creation of first contact pads (18) on the second main surface of the first semiconductor substrate which via the electrically conductive material in the via holes (14) are electrically conductively connected to the first contact zones; preparation of second component structures with second contact zones on a second semiconductor substrate (3); creation of second contact pads (9) which are electrically conductively connected to the second contact zones; and connecting of the first and second semiconductor substrates so that the two substrates are both electrically and mechanically connected via the first and second contact pads. According to the method provided for in the invention a three-dimensional, integrated circuit can be produced by repeating the above steps as often as required.