发明名称 CIRCUIT DE PRODUCTION D'UNE HAUTE TENSION DE PROGRAMMATION D'UNE MEMOIRE
摘要 The invention concerns an integrated circuit comprising a detection circuit (10) and a rectifier circuit (20) associated in series, to supply a rectified voltage (HV1, HV1), and a low voltage regulating circuit (30, 34) which receives the rectified voltage (HV1) and supplies a low voltage (Vcc). The invention is characterised in that the circuit further comprises a voltage producing circuit (100) which receives the rectified voltage (HV1) and produces high voltage (HT) different from the low voltage (Vcc). In one embodiment, the circuit also includes a memory (40) comprising a memory plane (42), the memory plane receiving the low voltage (Vcc) and the high voltage (HT).
申请公布号 FR2795881(A1) 申请公布日期 2001.01.05
申请号 FR19990008663 申请日期 1999.06.30
申请人 STMICROELECTRONICS SA 发明人 DEVIN JEAN;CHEHADI MOHAMAD
分类号 G11C16/06;G05F1/00;G06K19/07;G11C16/12;G11C16/30;H02M3/155;(IPC1-7):H02M3/08;G11C5/14;H04B5/00 主分类号 G11C16/06
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