SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor laser device and a manufacturing method thereof are provided to enhance the focusing efficiency of current by shielding the flow of current through a schottky barrier on the active layer and by shielding the flow of current through a reverse junction under the active layer. CONSTITUTION: A channel stripe of recessed shape having a flat bottom and inclined portions is formed on a first conductive type substrate(11). A buffer layer(12) is formed on the substrate while maintaining the recessed shape. A lower clad layer(13) is formed on the buffer layer while maintaining the recessed shape, and has first conductivity in the bottom and outside of the inclined portions and second conductivity on the inclined portions. An activation layer(14) is formed on the lower clad layer while maintaining the recessed shape. A second conductive type upper clad layer(15) is formed on the activation layer while maintaining the recessed shape. A cap layer(17) is filled in the recess of the upper clad layer for ohmic contact. A second conductive type metal electrode layer(18) is formed on the cap layer and the exposed upper clad layer, and forms a schottky barrier at a contact surface with the upper clad layer.