发明名称 TRANSFER MARK STRUCTURE FOR MULTILAYERED WIRING PROCESS AND FORMATION OF TRANSFER MARK FOR MULTILAYERED WIRING PROCESS
摘要 PURPOSE: To avert the influence of dishing at the time of molding of groove patterns for multilayered wiring and to make the reading accuracy of marks for transfer higher and stabler by forming underlay layers right below the marks for transfer as groove- like patterns. CONSTITUTION: The underlay layers 102 similar to those of the prior art exist on the lower layers of hole patterns 13 shown by diagonal lines in the transfer mark structure 10 for the multilayered wiring process and wiring layers 16 are formed on the underlay layers 102. While the wiring layers 16 are heretofore the regions constituted of one rectangular shape in the prior art, this form is a shape lined up with fine lines at equal intervals. When a CPM processing is executed by depositing >=1 layer of the wiring layers 16 consisting of conductors on the groove-like patterns 12, the front surfaces of the groove-like patterns 12 do not have a wide range of surfaces as those in the prior art and, therefore, the occurrence of the dishing on the polished surfaces may be prevented and eventually, the formation of the smooth surfaces is possible and, therefore, the formation of the hole patterns 13 with the good accuracy is made possible.
申请公布号 KR20010014936(A) 申请公布日期 2001.02.26
申请号 KR20000026896 申请日期 2000.05.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 HASHIZUME YASUYUKI;SAKAEMORI TAKAHISA
分类号 H01L23/52;G03F9/00;H01L21/027;H01L21/20;H01L21/3205;H01L23/544;(IPC1-7):H01L21/320 主分类号 H01L23/52
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