| 摘要 |
PURPOSE: To obtain a semiconductor device where a short circuit is restrained from occurring between lower electrodes even if the adjacent electrodes are made to approach one another in a capacitor provided with cylindrical lower electrodes where HSG is formed on their surfaces. CONSTITUTION: A trench element isolation oxide film 11 is formed on the surface of a silicon substrate 10, and a transistor 3 is formed in an active region other then an element isolation region. The storage electrode 7 of a capacitor 15 buried in a third interlayer insulating film 14 through the intermediary of a first interlayer insulating film 12 and a second interlayer insulating film is formed above the transistor 3, and a protective film 16 is formed on the third interlayer insulating film 16. By the presence of the protective film 16, a short circuit is restrained from occurring between the adjacent storage electrodes 7 even if an HSG 21 is formed on the surface of the storage electrode 7.
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