| 摘要 |
PURPOSE: To fully suppress damages to be received by a silicon substrate, when opening a storage node contact(SC) in a manufacture for DRAM of a capacitor over-bit line(COB) structure. CONSTITUTION: A lower layer insulation film 6 is formed so as to coat a source drain region 5 made conducting to a capacitor. A bit line 9 and upper layer insulating films 7, 10 are formed on an upper layer of the lower layer insulating film (A). Anisotropic etching is performed on the condition that the upper layer insulating films 7, 10 be removed from the lower layer insulating film 6 at a high selection ratio, and a SC 11 is formed so as to open to the lower layer insulating film 6 (B). The interior of the SC 11 and a surface of the upper layer insulating film 10 are coated with an insulating film 12 of the same film quality as that of the lower layer insulating film 6 (C). The anisotropic etching is performed on the condition that the lower layer insulation film be removed from the silicon film at a high selection ratio, and the SC 11 is extended until it is opened to the source drain region 5.
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