| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of rough etching which causes dust at a substrate outer edge by coating an insulating layer at the substrate outer edge as well as a semiconductor substrate with an organic compound silicon film which is decomposed into a film of high etching-resistance under energy projection. SOLUTION: A polysilane film exposed at a substrate outer edge is selectively irradiated with electron ray. Due to the electron ray projection, the irradiated part changes to a decomposition part 45 of a high etching-resistant material. Then, with the pattern of a resist film 50 as an etching mask, a laminated insulating film comprising a thermal oxidation film 15, a silicon nitride film 20, and a TEOS film 30 is etched. Since the decomposition part 45 which was decomposed under electron ray projection is a film of high etching-resistance, the film reduction during etching is less while the silicon nitride film 20 and the TEOS film 30 at the substrate outer edge are not etched.
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