| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device having satisfactory image quality and satisfactory yield, and to provide its manufacturing method. SOLUTION: A solid-sate image pickup device has a photodiode 18 formed in a substrate and a MOS transistor adjacent to the diode. The photodiode is formed of a part 18a, exposed to the face of the substrate near the gate of the MOS transistor and a diffusion region which draws an are and of which width extends more as it is separated more from the gate and is formed in the substrate. In such a solid-state image pickup device, image quality can be improved using a simple constitution, since the exposure of the photodiode to the surface of the substrate is little. In a manufacturing method for forming the diffusion region, a sidewall spacer 16' is formed on the sidewall of a gate electrode 14 and an ion implanting condition is selected properly.
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