| 摘要 |
PROBLEM TO BE SOLVED: To reduce foreign matters and to improve the working ratio by suppressing the deposition of a film on the place other than a substrate to be deposited with a thin film in a CVD system. SOLUTION: The inner wall of a reaction vessel is coated with a film composed of any material selected from W, Cu, Ti, Ta, Pt, SiC, Si3N4, TiN and Al2O3, a film composed of a mixture containing any of them or a multilayered film obtained by laminating any films, by which the deposition of the film on the inner wall of the reaction vessel can remarkably be reduced. By this invention, the deposition of the film on the place other than a substrate to be deposited with the thin film in a CVD system can be suppressed, and the generation of foreign matters and the reduction of the concentration of a gaseous starting material can be suppressed.
|
